Development of durable MTJ under harsh environment for STT-MRAM at 1Xnm technology node

Researchers at Tohoku University have announced the development of a new magnetic tunnel junction, by which the team has demonstrated an extended retention time for digital information without an increase of the active power consumption.

Development of durable MTJ under harsh environment for STT-MRAM at 1Xnm technology node

Researchers at Tohoku University have announced the development of a new magnetic tunnel junction, by which the team has demonstrated an extended retention time for digital information without ...

Fri 14 Jun 19 from Phys.org

Development of durable MTJ under harsh environment for STT-MRAM at 1Xnm technology node, Fri 14 Jun 19 from Eurekalert

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