Remaining switched on to silicon-based electronics

The difficulty of further increasing the power conversion efficiency of silicon-based components in power electronics seems to indicate that we are reaching the limits of potential advances to this technology. However, a research group headed by The University of Tokyo recently challenged that view by developing a power switching device that surpasses previous performance limits, illustrating that silicon technology can still be further optimized. The researchers developed an improved insulated gate bipolar transistor (IGBT), which is a type of switch used in power conversion to switch high voltages of around 600 to 6500 V.

Remaining switched on to silicon-based electronics

The difficulty of further increasing the power conversion efficiency of silicon-based components in power electronics seems to indicate that we are reaching the limits of potential advances ...

Wed 5 Jun 19 from Phys.org

Remaining switched on to silicon-based electronics, Wed 5 Jun 19 from ScienceDaily

Remaining switched on to silicon-based electronics, Wed 5 Jun 19 from Eurekalert

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